4'' 6'' 8'' Silicon Wafer

Specifications

Wafer Material: Silicon (Si)
Diameter: Not Specified
Thickness: 280 um
Size: 4'' 6'' 8''
Type: NP
TTV: ≤10 um
Parallelism: <0.05 mm
Surface Roughness: <Ra 0.8 um
Infrared Transmission Range: 3–5 µm
Surface Finish: Polished to optical-grade smoothness
Thickness Tolerance: Customized per request
Processing Capabilities: Growth, Cutting, Polishing, Coating, Dicing
Optical Application Suitability: IR Windows, Filters, Reflectors, Lenses
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Features

  • Wide Infrared Transparency: Ideal for 3–5 µm mid-IR applications
  • Excellent Thermal Conductivity: Enhances optical stability under thermal load
  • Low Density: Suitable for weight-sensitive systems
  • High Surface Smoothness: Precision-polished for optical-grade applications
  • Material Variety: Available in CZ, FZ, and intrinsic silicon types
  • Full-Process Control: In-house growth, cutting, polishing, coating, and dicing
  • Customizable Options: Tailored dimensions and specifications upon request
  • Batch and Custom Production: Scalable for R&D or large-scale deployment

Applications

  • Infrared Optical Windows: Substrates for mid-IR transmission systems
  • Optical Filters: Base material for narrowband and broadband filters
  • Laser Reflectors: Thermally stable and reflective substrate
  • Infrared Thermometry: Sensor components for thermal detection systems
  • Infrared Imaging Lenses: High-precision optical components for imaging systems