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Gallium Antimonide Epitaxy Ready Polished Wafers
Wafer Technology Ltd
Gallium Antimonide is supplied in polished wafer form. All slices are individually laser scribed with ingot and slice identity to ensure perfect traceability. Surface orientations are offered to an accuracy of +/- 0.05 degrees using a triple axis X-Ray diffractometer system. Substrates can also be supplied with very precise ...
  • Wafer Material: Gallium Antimonide (GaSb)
  • Diameter: 50.5-100 mm
  • Thickness: 500-1000 um
Data Sheet
Gallium Arsenide Epitaxy Ready Polished Wafers
Wafer Technology Ltd
Gallium Arsenide can be supplied in as-cut, etched or polished wafer forms. All slices are individually laser scribed with ingot and slice identity to ensure perfect traceability. Surface orientations are offered to an accuracy of +/- 0.05 degrees using a triple axis X-Ray diffractometer system. Substrates can also be supplied with ...
  • Wafer Material: Gallium Arsenide (GaAs)
  • Diameter: 50.5-76.2 mm
  • Thickness: 350-625 um
Data Sheet
Indium Phosphide Epitaxy Ready Polished Wafers
Wafer Technology Ltd
Indium Phosphide can be supplied in as-cut, etched or polished wafer forms. All slices are individually laser scribed with ingot and slice identity to ensure perfect traceability. Surface orientations are offered to an accuracy of +/- 0.05 degrees using a triple axis X-Ray diffractometer system. Substrates can also be supplied with ...
  • Wafer Material: Indium Phosphide (InP)
  • Diameter: 50.5 mm
  • Thickness: 350-500 um
Data Sheet