Gallium Arsenide Epitaxy Ready Polished Wafers
Description
Gallium Arsenide can be supplied in as-cut, etched or polished wafer forms. All slices are individually laser scribed with ingot and slice identity to ensure perfect traceability. Surface orientations are offered to an accuracy of +/- 0.05 degrees using a triple axis X-Ray diffractometer system. Substrates can also be supplied with very precise misorientations in any direction from the growth plane. Higher index substrates of the type (n,1,1) where n = 1,2,3,4,5,6 etc and orientations such as (110) are also available. We also offer wafers with cut and/or cleaved flats.
Gallium Arsenide Epitaxy Ready Polished Wafers
Specifications |
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|---|---|
| Wafer Material: | Gallium Arsenide (GaAs) |
| Diameter: | 50.5-76.2 mm |
| Thickness: | 350-625 um |
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Frequently Asked Questions
All slices of Gallium Arsenide wafer are individually laser scribed with ingot and slice identity to ensure perfect traceability.
The electrical and doping specifications of Gallium Arsenide wafer include dopant type, resistivity, carrier concentration, mobility, and E.P.D.
Polished wafers are offered in a coin-style wafer shipper, individually sealed in two outer bags in an inert atmosphere. Cassette shipments are available on request. As-cut wafers are shipped in a cassette. Glassine bag is available on request.
Gallium Arsenide Epitaxy Ready Polished Wafer is a type of wafer that can be supplied in as-cut, etched, or polished forms.
Surface orientations are offered to an accuracy of +/- 0.05 degrees using a triple axis X-Ray diffractometer system.