Aluminum Nitride Substrate
Innovacera Ceramic Thermally Conductive Interface Pads are designed to provide a preferential heat-transfer path between heat-generating components, heat sinks, and other cooling devices. The pads are used to fill air gaps caused by imperfectly flat or smooth surfaces which should be in thermal contact. The pads are made of ceramic materials such as alumina ceramic and aluminum nitride, which help in providing enhanced thermal conductivity and excellent insulation performance. Typical applications include Power Devices, Integrated Circuit (IC) chip packaging heat conduction, MOSFET Transistor, IGBT Transistor Heat Sink, MOS Transistor, heat sink interface, LED board Thermal Interface Material (TIM), Chip ON Film (COF) heat conduction.
Aluminum Nitride Substrate
|Type Of Ceramic:||Unglazed|
|Thermal Conductivity:||170-220 W / (m * K)|
|Density:||≥ 3.3 g/cm3|
|Open Porosity:||0 vol.-%|
|Bending Strength σ M:||≥ 350 MPa|
|Young's Modulus:||≥ 320 GPa|
|Specific Heat:||740 J / (kg * K)|
|Typical Colour:||Grey -|
High thermal conductivity
Excellent thermal shock resistance
Excellent insulation, >15KV / cm
Plasma etching resistance
Good shock resistance
Excellent mechanical properties
Components for semiconductor equipment
Thermal module substrate
High power transistor module substrate
High frequency device substrate
Exothermic insulation board for Thyristor Modules
Semiconductor laser, fixed substrate for light emitting diode (LED)
Hybrid integrated module, ignition device module
For pricing, technical or any other questions please contact the supplier
- No registration required
- No markups, no fees
- Direct contact with supplier
Frequently Asked Questions
Innovacera Ceramic Thermally Conductive Interface Pads are used to provide a preferential heat-transfer path between heat-generating components, heat sinks, and other cooling devices.
The pads are made of ceramic materials such as alumina ceramic and aluminum nitride.
The pads have high thermal conductivity, excellent thermal shock resistance, excellent insulation (>15KV/cm), plasma etching resistance, good shock resistance, non-toxicity, and excellent mechanical properties.
Some typical applications include IC chip packaging heat conduction, MOSFET Transistor, IGBT Transistor Heat Sink, LED board Thermal Interface Material (TIM), and semiconductor laser substrate.
Aluminum nitride has a density of 3.33 g/cm3, thermal conductivity of 210 W/m.K, bending strength of 300 Mpa, insulation of 27 KV/mm, dielectric constant of 8.9, and a thermal expansion coefficient of 4.9 (10-6).
You May Also Like
Don’t have an account?
Please consider registering
NOTE: It may take up to 10 min to receive the registration verification link. For immediate assistance please use the “GUEST” option above.
Your inquiry has been received
by adding a password
Benefits of having an account:
- Save time on filling future request forms
- Track your prior Requests
- Save favorite products in your account
- Choose your contact preferences
- If you change your mind later, you may close you account with 1 click
The Leading Photonics Marketplace
Within 3-10 minutes you will receive an email with a validation link to activate your account.
If you don't receive the confirmation link soon, please let us know at email@example.com