EpiTT Product Family
Description
EpiTT combines measurements of temperature and reflectance at three wavelengths in one tool. For True Temperature (TT), we apply the method of Emissivity Corrected Pyrometry, which delivers the precise surface temperatures of opaque materials at 950 nm (Si, GaAs, InP). For materials that are transparent at 950 nm (GaN, Sapphire, SiC), EpiTT measures the temperature on the top side of the carrier.
Measuring reflectance at three wavelengths monitors all essential properties of the growing layers, such as growth rate, film thickness, stoichiometry changes and morphology. EpiTT offers industry-standard metrology for all kinds of epitaxial growth systems and is compatible with different main rotation frequencies in the range from 0-1500 rpm.
EpiTT Product Family
Specifications |
|
|---|---|
| Index Measurement Range: | 3-20 |
| Accuracy: | 1-1 |
| Repeatability: | 1-1 |
Features
- Temperature range: T=450°C to 1300°C for large viewport systems / T=500°C to 1400°C for narrow viewport systems / other temperature ranges on request, e.g. 1500°C for UV LED applications, 1700°C for SiC
- Accuracy better than 1 K
- Wafer and area selective measurements
- True wafer temperature for opaque semiconductors such as InP, Graphite (SbS)
- Pocket temperature for GaN, Sapphire and SiC
Applications
- GaN LED and laser diode production
- GaAs/AlGaInP/InP laser diode production
- Triple-junction solar cell production on GaAs, Ge, Si
- SiC for power electronics
- R&D for new materials and devices
For pricing, technical or any other questions please contact the supplier
- No registration required
- No markups, no fees
- Direct contact with supplier
Contact Supplier
How to order?
-
Ships from:
Germany
-
Sold by:
-
On FindLight:
External Vendor
Claim LayTec AG Page to edit and add data
Frequently Asked Questions
The EpiTT measures temperature and reflectance at three wavelengths.
The EpiTT can measure the temperature of opaque materials such as Si, GaAs, and InP, as well as transparent materials like GaN, Sapphire, and SiC.
The EpiTT can monitor properties such as growth rate, film thickness, stoichiometry changes, and morphology.
The EpiTT has a temperature range of T=450°C to 1300°C for large viewport systems and T=500°C to 1400°C for narrow viewport systems. Other temperature ranges can be requested.
Yes, the EpiTT is compatible with different main rotation frequencies in the range from 0-1500 rpm.