Tera-1024 Terahertz Camera
Description
The detectors are fabricated with a GaAs high-mobility heterostructure in the standard semiconductor cycle using conventional optical lithography. The imaging sensor is manufactured on a single wafer. That process ensures high homogeneity and reproducibility of the plasmonic detector parameters (pixel-to-pixel deviation responsivity is within a 20- percent range). Each detector unit has a room-temperature responsivity up to 50 kV/W with read-out circuitry and noise-equivalent power of 1 nW/ in the frequency range 10 GHz — 1 THz. The detection mechanism is based on excitation of plasma oscillations in a two-dimensional electron system with subsequent rectification. The rectification takes place on special defects made in the electron system. Our terahertz cameras are active detecting devices, and require an external THz source. We offer sub-terahertz wave sources based on IMPATT technology. All our TERA-series THz imaging cameras employ the same type of detectors with identical capabilities and spatial resolution. The difference between our models lies in the number of pixels in their sensor arrays and their effective imaging area. In addition to our standard THz camera models we offer customized solutions to satisfy diverse configuration and geometry requirements.
Tera-1024 Terahertz Camera
Specifications |
|
|---|---|
| Scan Range: | <= 100mm X 100mm |
| Resolution (X Direction): | >= 500um um |
| Resolution (Y Direction): | >= 500um |
For pricing, technical or any other questions please contact the supplier
- No registration required
- No markups, no fees
- Direct contact with supplier
Contact Supplier
How to order?
-
Ships from:
United States
-
Sold by:
-
On FindLight:
since 2020
Frequently Asked Questions
Yes, in addition to our standard THz camera models we offer customized solutions to satisfy diverse configuration and geometry requirements.
Yes, our terahertz cameras are active detecting devices, and require an external THz source.
The detection mechanism is based on excitation of plasma oscillations in a two-dimensional electron system with subsequent rectification.
The difference between our models lies in the number of pixels in their sensor arrays and their effective imaging area.
Each detector unit has a room-temperature responsivity up to 50 kV/W with read-out circuitry and noise-equivalent power of 1 nW/ in the frequency range 10 GHz — 1 THz.