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Gallium Arsenide (GaAs) Raw Wafers

Gallium Arsenide Epitaxy Ready Polished Wafers
Wafer Technology Ltd
Gallium Arsenide can be supplied in as-cut, etched or polished wafer forms. All slices are individually laser scribed with ingot and slice identity to ensure perfect traceability. Surface orientations are offered to an accuracy of +/- 0.05 degrees using a triple axis X-Ray diffractometer system. Substrates can also be supplied with ...

Specifications

Wafer Material: Gallium Arsenide (GaAs)
Diameter: 50.5-76.2 mm
Thickness: 350-625 um
Data Sheet
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