AIXTRON SE
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Frequently Asked Questions

The AIX 2800G4-TM IC2 Deposition System is used for GaAs/InP based Optoelectronics and p-HEMT/HBT Devices.

The features of the AIX 2800G4-TM IC2 Deposition System include a unique true horizontal flow Planetary Reactor, an all graphite process chamber, triple process gas injection, and single wafer rotation.

The AIX 2800G4-TM IC2 Deposition System is best suited for deposition uniformity control at the wafer level, lowest particle count, highest product yield, and lowest production cost.

The design highlights of the AIX 2800G4-TM IC2 Deposition System include automated satellite loading, triple gas injector, and the latest reactor design featuring advanced process tuning, increased process robustness, and minimized overall maintenance.

The available susceptor configurations for the AIX 2800G4-TM IC2 Deposition System are 8 x 6 inch, 60 x 2 inch, 15 x 4 inch, and 14 x 3 inch.

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