Brewer Science E2Stack AL412 EUV Assist Layer Material
Description
The biggest problem facing EUV lithographers is solving the RLS trade-off: simultaneous improvement of resolution, line width roughness (LWR), and photosensitivity. E2Stack® AL412 spin-on assist layer material has been shown to reduce line edge roughness (LER) and pattern collapse, planarize topography, protect underlying layers from high-energy EUV photon damage, improve adhesion, and improve pattern transfer etch selectivity.
Brewer Science E2Stack AL412 EUV Assist Layer Material
Specifications |
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| Type Of Service: | Engineering design |
Features
Reduce pattern collapse and microbridging caused by the high aspect ratios of printed features
Reduce LER/LWR
Promote adhesion and reduce the effect of strong capillary forces during development
Experience less outgassing than positive-tone photoresists during EUV exposure
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Frequently Asked Questions
The purpose of Brewer Science E2Stack AL412 EUV Assist Layer Material is to improve resolution, line width roughness (LWR), and photosensitivity in EUV lithography.
The features of E2Stack AL412 include reducing line edge roughness (LER) and pattern collapse, planarizing topography, protecting underlying layers from EUV photon damage, improving adhesion, and enhancing pattern transfer etch selectivity.
E2Stack AL412 reduces pattern collapse and microbridging by addressing the high aspect ratios of printed features.
E2Stack AL412 experiences less outgassing than positive-tone photoresists during EUV exposure.
Before using E2Stack AL412, the user should determine its suitability for their intended use. The seller and manufacturer are not liable for any injury, loss, or damage arising from the use or inability to use the product.