750 Ion Source
Description
-5 and small substrates. Telemark technology offers low pressure operation (10 mbar) for a longer
mean free path and higher ion energies than traditional End Hall sources.
filaments. The Telemark ion beam source line is capable of either mixed gas or pure oxygen
operation, allowing for deposition of metal oxide films of the highest index and lowest stress.
achievable with any other ion source.
Telemark sources achieve stable films with no substrate pre-heating and are an excellent
choice for depositing durable films on low temperature substrates.
750 Ion Source
Specifications |
|
|---|---|
| Beam Diameter: | 63 mm |
| Energy Range: | 0.3-0.3keV |
| Beam Power: | 750 W |
| Beam Divergence: | 80 deg |
| Weight: | 28 kg |
Features
- Ion beam energies up to 300eV
- Ion beam currents to 15 amps
- Full-time use of high purity oxygen, argon or nitrogen.
- Highly efficient design greatly reduces gas load
- Water-cooled to reduce maintenance and radiation load
- Extremely low maintenance. The patented design utilizes a specially coated anode, which resists build-up of electrically insulating oxide coatings. No routinely replacement parts.
- Extremely stable operation in IAD processes
- Broad – beam divergence for large area coverage with uniform ion flux.
- Pulse-mode operation for ion-assistance of radiation-sensitive film materials such as many commonly used infrared and UV thin film materials eg MgF2 & LaF2. For further information please refer to separate information sheets.
- Remote Control and Monitoring – all control through an RS232 interface
For pricing, technical or any other questions please contact the supplier
- No registration required
- No markups, no fees
- Direct contact with supplier
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Frequently Asked Questions
Yes, the Model 1250 Ion Beam system provides ion energies up to 225eV, with beam currents available up to 4 Amps (to a maximum of 750W ).
The price includes source with single filament, power supply, feedthroughs, one mass flow controller, and cables for installation.
Telemark sources achieve stable films with no substrate pre-heating, and are an excellent choice for depositing durable films on low temperature substrates.
The Mini UHV Ion Beam Source Model 750 is a constant DC filtered Source which can be pumped into the10^-10 Torr vacuum range capable of energies up to 225eV, with beam current of up to 1.5 amps in oxygen, nitrogen or argon (500W maximum).
The Telemark ion beam source line is capable of either mixed gas or pure oxygen operation, allowing for deposition of metal oxide films of the highest index and lowest stress.