12 cm RF Ion Beam Source
Description
Used primarily for ion assist, the 12cm RF ion beam source also finds great value as a deposition source in smaller systems or an ion beam figuring (IBF) source for large substrates. Providing additional service as a pre-clean source for substrates, the 12cm source is one of the most versatile options available. As with all RF ion sources from Plasma Process Group, the 12cm can run on almost any process gas, including inert species such as argon and xenon, and reactive species like O2, N2, CH3, and many more. Capable of outputs as high as 400mA at 1500eV, this source is also stable at more common assist conditions like 200mA at 250V. The 12cm source provides a 12cm ion beam that is shaped by the choice of grids. Available with molybdenum convergent or divergent grids with several possible focal points, or collimated graphite, the 12cm beam can be optimized for almost any process.
12 cm RF Ion Beam Source
Specifications |
|
|---|---|
| Beam Diameter: | 120 mm |
| Energy Range: | 0.5-1.5keV |
For pricing, technical or any other questions please contact the supplier
- No registration required
- No markups, no fees
- Direct contact with supplier
Contact Supplier
How to order?
-
Ships from:
-
Sold by:
-
On FindLight:
External Vendor
Claim Plasma Process Group Page to edit and add data
Frequently Asked Questions
Yes, the 12cm beam can be optimized for almost any process by choosing the appropriate grid assembly.
The 12cm ion beam is shaped by the choice of grids. The 12cm RF ion beam source is available with molybdenum convergent or divergent grids with several possible focal points, or collimated graphite.
The 12cm RF ion beam source can run on almost any process gas, including inert species such as argon and xenon, and reactive species like O2, N2, CH3, and many more.
The 12cm RF ion beam source is capable of outputs as high as 400mA at 1500eV, but it is also stable at more common assist conditions like 200mA at 250V.
The 12cm RF ion beam source is primarily used for ion assist, but it can also be used as a deposition source in smaller systems or an ion beam figuring (IBF) source for large substrates.