Single Crystal Sapphire Substrates for LED Manufacturing
Description
These single crystal sapphire substrates are ideal for epitaxial deposition of GaN and other III-V and II-VI thin-films for use in the manufacture of bright blue and green LED’s. C-axis [0001] oriented wafers are available in the sizes shown below.
One side is highly polished to 1 nm or less and the second side is either fine ground or optically polished. The parts are available in lots of 10 or 25 in cassettes packaged in Class-100 clean room under nitrogen and are EPI ready.
Single Crystal Sapphire Substrates for LED Manufacturing
Specifications |
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|---|---|
| Substrate Material: | Sapphire |
| Antireflection Coating: | Coated |
| Diameter: | 50.8 mm |
| Surface Quality: | Not Specified |
| Surface Flatness: | Not Specified |
| Thickness: | 0.332 mm |
| Crystal: | Single crystal Sapphire |
| Purity: | >99.9% |
| Orientation: | 0001 C-axis, +/- 0.2 deg. |
| Dia. Tol.: | +/- 0.25mm, fine grind OD |
| Thickness: | 0.332 mm (50.8mm dia.) and 0.550 mm (76.2mm dia.) |
| Thickness Tol.: | +/- 0.25mm |
| Primary Flat: | 1120 A-axis +/- 0.3 deg. |
| Flat Length: | 16.0 +/- 1.5mm (50.8mm dia.) and 22.0 +/- 1.5mm (76.2mm dia.) |
| Front Side Surface: | EPI polish, (Ra) ≤ 1 nm |
| Back Side Surface: | Fine Ground, R max 5-10 um or Optically Polished 80-50 |
| TTV: | < 25 um upon request |
| BOW: | < 20 um upon request |
| Laser Mark: | upon request |
| Packaging: | Vacuum packed cassette, class 100 clean room, under nitrogen |
| Cleanliness: | EPI ready |
Features
- High-purity sapphire substrate with >99.9% purity
- C-axis [0001] oriented wafer with +/- 0.2 deg. orientation
- Available in two sizes: 50.8mm dia. and 76.2mm dia.
- Highly polished front side surface with EPI polish and Ra ≤ 1 nm
- Second side surface is either fine ground or optically polished
- Available in one side polish or double side polish
- Vacuum packed cassette packaging in Class-100 clean room under nitrogen
- TTV < 25 um and BOW < 20 um upon request
- Custom fabricated to order with a typical lead time of 1 week
- Quantity discounts available
Applications
- Ideal for epitaxial deposition of GaN and other III-V and II-VI thin-films
- Used in the manufacture of bright blue and green LED’s
For pricing, technical or any other questions please contact the supplier
- No registration required
- No markups, no fees
- Direct contact with supplier
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How to order?
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Ships from:
United States
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Sold by:
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On FindLight:
since 2020
Frequently Asked Questions
Single crystal sapphire substrates are used for epitaxial deposition of GaN and other III-V and II-VI thin-films for the manufacture of bright blue and green LED's.
The wafer is C-axis [0001] oriented with +/- 0.2 deg. orientation.
The substrates are available in two sizes: 50.8mm dia. and 76.2mm dia.
The front side surface is highly polished with EPI polish and Ra ≤ 1 nm.
The substrates are vacuum packed in cassettes in a Class-100 clean room under nitrogen.