Infrared nonlinear crystals GaSe - 30

Altos Photonics, Inc.

OVERVIEW

GaSe has band edges at 0.65 and 18 μm. GaSe has been successfully used for efficient SHG of CO2 laser, for SHG of pulsed CO, CO2 and chemical DF-laser (λ = 2.36 μm) radiation; up conversion of CO and CO2 laser radiation into the visible range; infrared pulses generation via difference frequency mixing of Neodymium and infrared dye laser or (F-)-centre laser pulses; OPG light generation within 3.5–18 μm; efficient TeraHertz generation in 100–1600 μm range. It is impossible to cut crystals for certain phase matching angles because of material structure (cleave along (001) plane) limiting areas of applications.

SPECIFICATION

Crystal Type: GaSe
Phase Mathcing Type: Type I, Type II
Mounting: Unmounted
Width: -- mm
Height: -- mm
Length: -- mm
Flatness: Not Available
Surface Quality (Scratch-Dig): Not Available
AR Coating: Not Coated
Thickness: 30 nm
Clear Aperture: 7 mm

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KEY FEATURES

Large effective optical nonlinearity, wide spectral and angular acceptances, broad transparency range, non-critical requirements for temperature stabilization and vibration control, well mechanically processed.

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Incoherent Light Sources

Charged Particle Sources

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Metrology and Inspection

Infrared nonlinear crystals GaSe - 30

OVERVIEW

SPECIFICATION

KEY FEATURES

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