HEM® Ti:Sapphire
Description
GTAT’s proprietary heat exchanger method (HEM) produces superior crystalline structure in crystal sizes up to 280 mm in diameter. The ultrafast laser optics made from HEM ti sapphire crystals have transmitted wavefront values of 1/10th wave or better and FOM values up to 1000.
Low damage, ti sapphire laser materials are processed in our optical fabrication facility with extremely tight geometries and crystal alignment. All aspects of crystal quality and optical fabrication workmanship are verified with our specialized test and measurement equipment. We provide detailed quality reporting on the laser, optical and mechanical attributes of our HEM ti sapphire laser optics.
GTAT has worked with the international community of high-intensity laser experts to develop the current range of HEM ti sapphire ultrafast laser optics. We are proud to deliver 200 mm and 220 mm ti sapphire laser optics in support of today’s leading edge high-intensity laser facilities.
HEM® Ti:Sapphire
Specifications |
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|---|---|
| Type Of Crystal: | Ti:Sapphire |
| Crystal Diameter: | 280 mm |
| Crystal Length: | N/A mm |
| AR Coating: | One side, Both sides |
Features
High quality Ti:Sapphire laser crystals begin with perfect crystalline structure and the correct 3+ valance electron state. We ensure these requirements through our multiple-stage, rigorous inspection process, using state-of-the-art test and measurement equipment. We test our rods for absorption values, homogeneity, light scatter, FOM, flatness, and transmitted wave fronts. Each HEM laser rod is examined and verified utilizing advanced equipment and expert laser technicians. Total focus on quality and accuracy guarantees that our laser crystals dimensions, surfaces and crystalline structure provide the foundation for your laser platform’s high power levels and excellent beam profiles.
- 280 mm in diameter
- Excellent homogeneity
- Superior Thermal Properties
- High Figures of Merit (FOM)
- No Bulk Scatter
- High Laser Damage Threshold
- Large sizes and highly doped material available
- Alpha values @ 532 nm of 0.3-10.0
Applications
HEM ti sapphire’s wide emission range, (660 nm to 1180 nm), high-power density pumping capability along with excellent thermal properties enable today’s high intensity laser platforms. These facilities are creating the next generation of laser based applications such as radiotherapy, proton therapy, accelerator physics, nuclear physics, far field physics, infrared spectroscopy and materials characterization. GTAT works closely with its customers to develop new crystal designs so that the ultrafast laser community can continue to advance the reliability and performance of high intensity lasers.
For pricing, technical or any other questions please contact the supplier
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Frequently Asked Questions
GTAT ensures the quality of HEM Ti:Sapphire through a multiple-stage, rigorous inspection process using state-of-the-art test and measurement equipment. Each HEM laser rod is examined and verified utilizing advanced equipment and expert laser technicians.
HEM Ti:Sapphire's wide emission range and high-power density pumping capability enable high intensity laser platforms used in radiotherapy, proton therapy, accelerator physics, nuclear physics, far field physics, infrared spectroscopy, and materials characterization.
HEM Ti:Sapphire has excellent homogeneity, superior thermal properties, high figures of merit (FOM), no bulk scatter, high laser damage threshold, and large sizes and highly doped material available.
HEM Ti:Sapphire is an ultrafast laser optic made from GTAT's proprietary heat exchanger method (HEM) ti sapphire crystals.
GTAT delivers 200 mm and 220 mm ti sapphire laser optics in support of today's leading edge high-intensity laser facilities.