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NeoPhotonics’ Series SR100 Fiber Optic Tap Power Monitors are used for in-line measurement of power in optical fiber. A miniature, hermetic package houses a stable optical tap and PIN photodiode. The patented process maintains fiber continuity, avoiding lenses or partial reflectors. This provides exceptional performance and ...
  • Diode Type: InGaAs
  • Wavelength Of Operation: 1550 nm
Data Sheet
PbS Detectors PB25-Series
Laser Components USA, Inc.
PB25 series is a collection of uncooled photoconductive single element PbS detectors that operate at room temperature with a 20% cut-off 3.0um. This series is widely used in analytic, safety and radiometric applications especially when large active areas are requested.
  • Diode Type: PbS
  • Wavelength Of Operation: 3300 nm
Data Sheet
PbSe Detectors PB45-Series
Laser Components USA, Inc.
The PB45 series is a collection of uncooled polycrystalline biased single element PbSe detectors that operate at room temperature with a 20% cut-off 4.7um. This series has been designed for demanding analytic, medical and radiometric applications.      
  • Diode Type: PbSe
  • Wavelength Of Operation: 4700 nm
Data Sheet
The IA35 series is a spectral addition to the IG26 series of extended InGaAs photodiodes. IA35 detectors are photovoltaic, and the active area has a diameter of 500 µm. IA35S500S4i is a high-quality yet affordable component. Compared to InAs products by traditional manufacturers of IR detectors, it offers double shunt resistance ...
  • Diode Type: InGaAs
  • Wavelength Of Operation: 3500 nm
Data Sheet
The IG26-series is a panchromatic PIN photodiode with a nominal wavelength cut-off at 2.6um. This series has been designed for demanding spectroscopic and radiometric applications. It offers excellent shunt resistance in combination with superior responsivity over a wide range.
  • Diode Type: InGaAs
  • Wavelength Of Operation: 2600 nm
Data Sheet
The IG24-series is a panchromatic PIN photodiode with a nominal wavelength cut-off at 2.2um. This series has been designed for demanding spectroscopic and radiometric applications. It offers excellent shunt resistance in combination with superior responsivity over a wide range.
  • Diode Type: InGaAs
  • Wavelength Of Operation: 2400 nm
Data Sheet
The IG22-series is a panchromatic PIN photodiode with a nominal wavelength cut-off at 2.2um. This series has been designed for demanding spectroscopic and radiometric applications. It offers excellent shunt resistance in combination with superior responsivity over a wide range.
  • Diode Type: InGaAs
  • Wavelength Of Operation: 2200 nm
Data Sheet
The IG19-series is a panchromatic PIN photodiode with a nominal wavelength cut-off at 1.9um. This series has been designed for demanding spectroscopic and radiometric applications. It offers excellent shunt resistance in combination with superior responsivity over a wide range.
  • Diode Type: InGaAs
  • Wavelength Of Operation: 1900 nm
Data Sheet
PINFET LDPA 0003R
OSI Laser Diode Inc.
The OSI Laser Diode Inc. LDPA 0003R PINFET provides an excellent solution for optical receiver systemsthat require both high sensitivity and wide dynamic range. Applications include telecommunications lineterminatingequipment or repeaters and optical sensor systems where a user adjustable gain may bedesirable for optimizing system ...
  • Diode Type: InGaAs
  • Wavelength Of Operation: 1550 nm
  • Bandwidth (3dB): 3 MHz
  • Optical Input Overload: -6 dBm
  • Responsivity (1550nm): 0.9 A/W
  • ...
Data Sheet
The OSI Laser Diode Inc. PINFET provides an excellent solution for optical receiver systems that require both high sensitivity andwide dynamic range. Applications include telecommunications line-terminating equipment or repeaters and optical sensor systems.The receiver package offers high reliability satisfying Telcordia specifications.
  • Diode Type: InGaAs
  • Wavelength Of Operation: 850, 1310, 1550 nm
  • Minimum Bandwidth: 5 - 250 MHz
  • Suggested Data Rate: 6 - 350 Mb/s
  • Sensitivity : -56 - -34 dBm
  • ...
Data Sheet
The OSI Laser Diode Inc. InGaAs PIN detector provides both small size and high performance in a miniature coaxial module. Designed to provide high responsivity and low leakage, LDI\\\'s detector modules exhibit low back reflection along with low polarization dependent loss (PDL). The detector module offers high reliability satisfying ...
  • Diode Type: InGaAs
  • Wavelength Of Operation: 1310,1550 nm
  • Bandwidth: 2.5 GHz
  • Responsivity: 0.8 - 0.9 A/W
  • Input Power: 10 dBm
  • ...
Data Sheet
• High Sensitivity/Wide Dynamic Range• High Responsivity and Low Dark Current• InGaAs Pin Detector• 4Mb/s, 52Mb/s, 155Mb/s & 622Mb/s• Single Supply Capable• Hermetic Package
  • Diode Type: InGaAs
  • Wavelength Of Operation: 1310/1550 nm
  • Dark Current: 0.5 nA
  • Operating Temperature: -40 - 80 C
  • Detector Bias: -10 V
Data Sheet

Did You know?

The PIN photodiode was invented by Jun-ichi Nishizawa and his colleagues in 1950. It is a semiconductor device that operates as a variable resistor at RF and microwave frequencies and consists of an intrinsic (lightly doped) region that is sandwiched between a p-type and an n-type layer. PIN diode finds its application in RF switches, attenuators, photodetectors, and phase shifters. The RC time constant determines the frequency response of the PIN device. PIN photodiodes may have a broad spectral range from the near infrared to ultraviolet and even to high-energy regions. They are also known for their high-speed response, high sensitivity, and low noise.