SXUV20HS1DS EUV Enhanced Detectors
Description
OPTO DIODE EUV Enhanced Detectors.
SXUV20HS1DS EUV Enhanced Detectors
Specifications |
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|---|---|
| Diode Type: | Si |
| Wavelength Of Operation: | 1 - 1000 nm |
| Responsivity At 13.5nm: | 0.22 A/W |
Features
Circular Active Area
Ideal for EUV Detection
High Speed
Grid lines 5 microns, Pitch 100 microns
Superior Radiation Hardness
High Photon Flux Robustness
TO-8 package
Protective Cover Plate
Applications
For pricing, technical or any other questions please contact the supplier
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How to order?
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Ships from:
United States
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Sold by:
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On FindLight:
External Vendor
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Frequently Asked Questions
The active area of the detector is circular with a diameter of 5.01 mm.
The detector has grid lines with a pitch of 100 microns.
This detector is ideal for EUV energy measurements and metrology.
The rise time of the detector is 3.5 nsec when RL=50 Ω and VR=150 V.
The detector can be stored and operated in temperatures ranging from -10°C to 40°C in ambient conditions, and -20°C to 80°C in nitrogen or vacuum conditions.