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Large Area InGaAs PIN Photodiodes FD2000W

Fermionics

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Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. High shunt resistance allows high sensitivity to low level optical signals. The photosensitive area is 2 mm in diameter. Planar-passivated device structure.

Specifications
Diode Type:	InGaAs
Wavelength Of Operation:	1300 nm

Data Sheet

Large Area InGaAs PIN Photodiodes FD1500W

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Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 1.5 mm in diameter. Planar-passivated device structure.

Specifications
Diode Type:	InGaAs
Wavelength Of Operation:	850 nm

Data Sheet

Large Area InGaAs PIN Photodiodes FD1000W

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Large area, high sensitivity photodiode for use in infrared instrumentation and sensing applications. High spectral response in the region 800 nm to 1700 nm. The photosensitive area is 1 mm in diameter. Planar-passivated device structure.

Specifications
Diode Type:	InGaAs
Wavelength Of Operation:	850 nm

Data Sheet

High Speed InGaAs PIN Photodiodes FD500 Series

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General purpose InGaAs PIN photodiodes useful for a wide range of applications including infrared instrumentation and moderate speed communication systems. The photosensitive area is 500 microns in diameter.

Specifications
Diode Type:	InGaAs
Wavelength Of Operation:	1300 nm

Data Sheet

High Speed InGaAs PIN Photodiodes FD300 Series

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General purpose InGaAs PIN photodiodes useful for a wide range of applications including infrared instrumentation and moderate speed communication systems. The photosensitive area is 300 microns in diameter.

Specifications
Diode Type:	InGaAs
Wavelength Of Operation:	1300 nm

Data Sheet

High Speed InGaAs PIN Photodiodes FD150 Series

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High-speed, low dark current, low capacitance photodiode for high speed communication systems, LANs, and FDDI applications. The 150 micron diameter photosensitive area improves coupling to multi-mode fiber using active device receptacles. Planar-passivated device structure.

Specifications
Diode Type:	InGaAs
Wavelength Of Operation:	1300 nm

Data Sheet

High Speed InGaAs PIN Photodiodes FD100 Series

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High-speed, low dark current, low capacitance photodiode for high speed communication systems, LANs, and FDDI applications. The photosensitive area is 100 microns in diameter. Planar-passivated device structure.

Specifications
Diode Type:	InGaAs
Wavelength Of Operation:	1300 nm

Data Sheet

High Speed InGaAs PIN Photodiodes FD50 Series

Fermionics

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Very high speed, low capacitance, low dark current photodiode for very high bit rate receiver applications. The photosensitive area is 50 microns in diameter. Planar-passivated device structure.

Specifications
Diode Type:	InGaAs
Wavelength Of Operation:	1300 nm

Data Sheet

CLD240 Silicon Photodiodes

Clairex Technologies

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The CLD240 series are new, direct replacements for the older CLD140 series and feature larger (0.060” x 0.060”) active area silicon PIN photodiode chips. Also featured are faster switching and lower junction capacitance. Three different lensing options are offered which satisfy the majority of application requirements. ...

Specifications
Diode Type:	Si
Wavelength Of Operation:	850 nm

Data Sheet

CFD470 Fiber Optic PIN Photodiode

Clairex Technologies

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The CFD470 contains a PIN silicon photodiode mounted on a TO-18 header. The devices are designed to self-align in the 0.228” (5.79mm) bore of a standard fiber-optic receptacle. Three crush ribs on the outside of the case provide press-fit installation and precise alignment. The CFD470 is designed to interface with multimode optical ...

Specifications
Diode Type:	Si
Wavelength Of Operation:	880 nm

Data Sheet

CLD340 Silicon Photodiodes

Clairex Technologies

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The CLD340 is a high temperature AlGaAs photodiode designed for sensitivity from 830 to 910nm. This specialty detector eliminates the need for signal modulation or filtering of ambient light when used where background illumination could cause problems. The 0.040\" by 0.040\" chip is mounted in a flat window TO-46 package. The CLE335 ...

Specifications
Diode Type:	GaInAsSb
Wavelength Of Operation:	880 nm

Data Sheet

CLD171 Silicon Photodiodes

Clairex Technologies

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The CLD171 and CLD171R, are 0.122\" x 0.122\" active area silicon photodiodes featuring high linearity and low dark current. They are epoxy encapsulated for lower cost applications. Wide acceptance angle permits use in IR air communications, ambient light detection, safety and monitoring, security systems, etc.

Specifications
Diode Type:	Si
Wavelength Of Operation:	860 nm

Data Sheet

CLD160 Silicon Photodiodes

Clairex Technologies

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The CLD160 is a 0.122\" x 0.122\" active area silicon photodiode mounted in a flat window TO-5 package. Wide acceptance angle permits use in IR air communications ambient light detection, safety and monitoring, security systems, etc. For additional information, call Clairex.

Specifications
Diode Type:	Si
Wavelength Of Operation:	860 nm

Data Sheet

CLD156 Silicon Photodiodes

Clairex Technologies

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The CLD156 and CLD156R are 0.122\" x 0.222\" active area silicon photodiodes featuring high linearity and low dark current. The TO-5 header provides thermal environment for reliable operation over a wide temperature range. Wide acceptance angle permits use in IR air communications, ambient light detection, safety and monitoring, ...