High Energy RAEA™ Ti:Sapphire Amplifier
Description
RAEA has been engineered to make system operation as simple as possible. With temperature-controlled modules, contamination-minimizing enclosures, and remote alignment capability, maintaining your RAEA system is easier than ever. We have designed every aspect of this system to ensure that you spend more time on your experiments and less time working on your laser.
High Energy RAEA™ Ti:Sapphire Amplifier
Specifications |
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|---|---|
| Center Wavelength: | N/A nm |
| Repetition Rate: | 1-5kHz |
| Pulse Energy: | 8 mJ |
| Energy Stability (RMS): | N/A % |
| Pulse Duration: | 35 fs |
| Pointing Stability (RMS): | N/A urad |
| Polarization: | Unspecified |
| Spatial Mode (M^2): | <1.3 |
| Amplification Scheme: | Not Specified |
Applications
- Materials characterization
- Femtochemistry
- THz generation
- Ultrafast imaging
- 2-photon polymerization
- Pump-probe experiments
- Attosecond science
For pricing, technical or any other questions please contact the supplier
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How to order?
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Ships from:
United States
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Frequently Asked Questions
RAEA is designed to make system operation as simple as possible, ensuring that you spend more time on your experiments and less time working on your laser.
Yes, a datasheet is available for RAEA.
RAEA is used in materials characterization, femtochemistry, THz generation, ultrafast imaging, 2-photon polymerization, pump-probe experiments, and attosecond science.
RAEA has temperature-controlled modules, contamination-minimizing enclosures, and remote alignment capability.
RAEA is a Ti:Sapphire Amplifier designed for high energy laser applications.