High Power RAEA™ Ti:Sapphire Amplifier
Description
RAEA has been engineered to make system operation as simple as possible. With temperature-controlled modules, contamination-minimizing enclosures, and remote alignment capability, maintaining your RAEA system is easier than ever. We have designed every aspect of this system to ensure that you spend more time on your experiments and less time working on your laser.
High Power RAEA™ Ti:Sapphire Amplifier
Specifications |
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|---|---|
| Center Wavelength: | N/A nm |
| Repetition Rate: | 5-30kHz |
| Pulse Energy: | 3 mJ |
| Energy Stability (RMS): | N/A % |
| Pulse Duration: | 35 fs |
| Pointing Stability (RMS): | N/A urad |
| Polarization: | Unspecified |
| Spatial Mode (M^2): | <1.3 |
| Amplification Scheme: | Not Specified |
Applications
- Materials characterization
- Femtochemistry
- THz generation
- Ultrafast imaging
- 2-photon polymerization
- Pump-probe experiments
- Attosecond science
For pricing, technical or any other questions please contact the supplier
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How to order?
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Ships from:
United States
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External Vendor
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Frequently Asked Questions
Yes, the RAEA Ti:Sapphire Amplifier has been engineered to make system operation as simple as possible. With temperature-controlled modules, contamination-minimizing enclosures, and remote alignment capability, maintaining your RAEA system is easier than ever.
The RAEA Ti:Sapphire Amplifier is designed to ensure that you spend more time on your experiments and less time working on your laser.
The RAEA Ti:Sapphire Amplifier has temperature-controlled modules, contamination-minimizing enclosures, and remote alignment capability.
The RAEA Ti:Sapphire Amplifier is used for materials characterization, femtochemistry, THz generation, ultrafast imaging, 2-photon polymerization, pump-probe experiments, and attosecond science.
You can find more information about the RAEA Ti:Sapphire Amplifier in the datasheet provided.