25 Gbit-s VCSEL And VCSEL Array Chips 850 nm
Description
These compact and very high modulation rate top-emitting GaAs-based vertical cavity surface emitting laser (VCSEL) chips and 1xN (N=1, 2, 4, 12, etc.) arrays are available as engineering samplesfor use in the development and evaluation of optical interconnects, optical backplanes and integrated waveguides, and next-generation optical data communicationssystems. The VCSELs are contacted on the top-surface individually using groundsource (GS) microprobes, wire bonds, or ip-chip bonds.
25 Gbit-s VCSEL And VCSEL Array Chips 850 nm
Specifications |
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|---|---|
| Wavelength: | 850 nm |
| Optical Power (CW): | 0.0035 W |
Features
Up to 12 parallel channels
More than 25 Gbit/s per channel
High temperature stability
A device-to-device pitch of 250 µm
Suitable for wire or flip-chip bonding
Applications
Active optical cables (AOCs), TOSA
High-speed optical interconnects and links
Infiniband EDR (eight data rate), Radio-over-Fiber, Fibre Channel and short-reach 40/100 Gbit/s Ethernet
Chip-to-chip interconnects
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Ships from:
Russia
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Frequently Asked Questions
The applications include active optical cables (AOCs), TOSA, high-speed optical interconnects and links, Infiniband EDR, Radio-over-Fiber, Fibre Channel, short-reach 40/100 Gbit/s Ethernet, and chip-to-chip interconnects.
The operating wavelength is 850 nm.
The maximum data bit rate per channel is more than 25 Gbit/s.
The VCSELs can be contacted individually on the top surface using ground-source (GS) microprobes, wire bonds, or flip-chip bonds.
The chips have high temperature stability.