AlN Laser Diode Carriers - Ceramic Material
Description
The ceramic substrate material is Aluminium Nitride (AlN). Standard grade is 170W/m·K. 200W/m·K is also available. Typical properties are:
TC (W/m·K) ~170
CTE (ppm/°C) ~4.6
Dielectric constant ~8.8 @ 1MHz
The AlN substrate material is available with as-fired, lapped or polished surface finishes. Standard substrate thicknesses are 0.63mm and 1.0mm with as-fired finish. Non-standard thickness material can also be fabricated. Substrates can be lapped and polished from 0.25mm thick up to 1.5mm thick.
AlN Laser Diode Carriers - Ceramic Material
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How to order?
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Ships from:
United Kingdom
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Sold by:
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On FindLight:
since 2020
Frequently Asked Questions
The thermal conductivity of the standard grade AlN Laser Diode Carriers is approximately 170W/m·K.
Yes, there is an option for higher thermal conductivity. The AlN Laser Diode Carriers with a thermal conductivity of 200W/m·K are also available.
The typical properties of the AlN substrate material are a thermal conductivity of approximately 170W/m·K, a coefficient of thermal expansion of around 4.6 ppm/°C, and a dielectric constant of approximately 8.8 @ 1MHz.
The AlN substrate material is available with as-fired, lapped, or polished surface finishes.
The standard thicknesses of the AlN substrate material are 0.63mm and 1.0mm with an as-fired finish. However, non-standard thickness material can also be fabricated.