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Page 6 - Pulsed Semiconductor Lasers

QPGAx2S03H Pulsed Laser Diodes
Pacer USA LLC
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QPGAx2S03H Pulsed Laser Diodes
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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 58 W
TPGAx2S09H Pulsed Laser Diodes
Pacer USA LLC
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TPGAx2S09H Pulsed Laser Diodes
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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 150 W
TPGAx2S03H Pulsed Laser Diodes
Pacer USA LLC
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TPGAx2S03H Pulsed Laser Diodes
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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 45 W
QPGAx1S09H Pulsed Laser Diodes
Pacer USA LLC
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QPGAx1S09H Pulsed Laser Diodes
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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 90 W
QPGAx1S03H Pulsed Laser Diodes
Pacer USA LLC
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QPGAx1S03H Pulsed Laser Diodes
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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 30 W
TPGAx1S09H Pulsed Laser Diodes
Pacer USA LLC
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TPGAx1S09H Pulsed Laser Diodes
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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 75 W
TPGAx1S03H Pulsed Laser Diodes
Pacer USA LLC
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TPGAx1S03H Pulsed Laser Diodes
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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 23 W
DPGAx1S09H Pulsed Laser Diodes
Pacer USA LLC
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DPGAx1S09H Pulsed Laser Diodes
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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 50 W
DPGAx1S03H Pulsed Laser Diodes
Pacer USA LLC
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DPGAx1S03H Pulsed Laser Diodes
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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 16 W
PGAx1S09H Pulsed Laser Diodes
Pacer USA LLC
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PGAx1S09H Pulsed Laser Diodes
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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 25 W
PGAx1S03H Pulsed Laser Diodes
Pacer USA LLC
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PGAx1S03H Pulsed Laser Diodes
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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg): -- W
Wavelength: 0.905 um
Pulse Duration: 1-1ns
Tuning Range Around Center Wavelength: Not Applicable
Peak Power: 8 W
NL742 Ultra-stable Nanosecond Laser
EKSPLA
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NL742 Ultra-stable Nanosecond Laser
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The main feature of NL740 series is the output of ultra-stable tunable duration (2 – 10 ns) narrow bandwidth nanosecond pulses based on temporally driven CW diode laser seeder and amplification stages. Start of the system is the single mode DFB laser with temporal output power modulator. Such front-end ensures reliable ...

Specifications
Output Power (avg): 0.01 W
Wavelength: 1.064 um
Pulse Duration: 3-10ns
Tuning Range Around Center Wavelength: Not Applicable
Data Sheet
NL740 Ultra-stable Nanosecond Laser
EKSPLA
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NL740 Ultra-stable Nanosecond Laser
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The main feature of NL740 series is the output of ultra-stable tunable duration (2 – 10 ns) narrow bandwidth nanosecond pulses based on temporally driven CW diode laser seeder and amplification stages. Start of the system is the single mode DFB laser with temporal output power modulator. Such front-end ensures reliable ...

Specifications
Output Power (avg): 0.0002 W
Wavelength: 1.064 um
Pulse Duration: 3-10ns
Tuning Range Around Center Wavelength: Not Applicable
Data Sheet
QuickSwitch Hybrid Pulsed Laser Diode with Shortest Pulse Duration
Laser Components USA, Inc.
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QuickSwitch Hybrid Pulsed Laser Diode with Shortest Pulse Duration
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LASER COMPONENTS Canada has developed a hybrid pulsed laser diode with the currently shortest pulse duration in the world. In one second, the QuickSwitch PLD generates up to 200,000 laser pulses with a typical duration of 2.5 ns. Depending on the operating voltage, it achieves an optical peak power of up to 89 watts. A high current ...

Specifications
Output Power (avg): 89 W
Wavelength: 0.905 um
Pulse Duration: 2.4-3ns
Tuning Range Around Center Wavelength: Not Applicable
Data Sheet
High Power Pulsed Laser Diodes 1550-Series
Laser Components USA, Inc.
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High Power Pulsed Laser Diodes 1550-Series
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These PLDs operate at high power, yet in the eye-safe range of 1550 nm. Common night-vision goggles cannot detect this wavelength, which make them particularly well suited for military laser rangefinders or friend/foe identification.

Specifications
Output Power (avg): up to 40 W
Wavelength: 1.55 um
Pulse Duration: 150-200ns
Tuning Range Around Center Wavelength: Not Applicable
Data Sheet
High-End and Low-Cost Pulsed Laser Diodes 905-Series
Laser Components USA, Inc.
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High-End and Low-Cost Pulsed Laser Diodes 905-Series
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LASER COMPONENTS 905-Series are available at 905 nm wavelength. They are highly reliable, possess excellent overdrive capabilities, and feature optimal thermal stability at a very precise chip alignment inside the housing.

Specifications
Output Power (avg): up to 650 W
Wavelength: 0.905 um
Pulse Duration: 2-200ns
Tuning Range Around Center Wavelength: Not Applicable
Data Sheet
Dual Aiming Laser CVDR 46650--TO5T
OSI Laser Diode Inc.
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Dual Aiming Laser CVDR 46650--TO5T
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Laser package contains a 905 pulsed laser diode (CVD 46) and a 650nm laser diode mounted side by side(distance between the centers of emission = 720um) on a common platform (+, case, positive). Theemission pattern of the two laser die will be centered on the package axis to within +/- 0.010 in.

Specifications
Output Power (avg): 3 W
Wavelength: 0.905 um
Pulse Duration: 100-100ns
Tuning Range Around Center Wavelength: <= 200nm
Spectral Width FWHM: 5 nm
...
Data Sheet
1550nm High Brightness Pulsed Laser Diodes
OSI Laser Diode Inc.
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1550nm High Brightness Pulsed Laser Diodes
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OSI Laser Diode Inc. provides an extremely high brightness CVLL 1550nm pulsed laser diode capable of up to 75 Wattsoutput power. The CVLL devices are well suited to most range finding applications requiring “eye safe” operation.

Specifications
Output Power (avg): 125 W
Wavelength: 1.550 um
Pulse Duration: 150-150ns
Tuning Range Around Center Wavelength: <= 200nm
Peak Power (min): 10-125W
...
Data Sheet
Hybrid Laser Diodes for Pulsed Operations
OSI Laser Diode Inc.
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Hybrid Laser Diodes for Pulsed Operations
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The LHCVN series incorporates a pulsed laser firing circuit into the same package as the laser diode. The hybridization of the driver permits much narrower pulse widths and faster rise times at lower voltage requirements than discretelaser drivers. The LHCVN series is compatible with all OSI LaserDiode, Inc standard MOCVD laser ...

Specifications
Output Power (avg): 200 W
Wavelength: 0.905 um
Pulse Duration: 10-10ns
Tuning Range Around Center Wavelength: <= 200nm
Emitter Area: 200 X 10 - 200 X 480 um
...
Data Sheet
High Power Monolithic Stack Pulsed Laser Diodes
OSI Laser Diode Inc.
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High Power Monolithic Stack Pulsed Laser Diodes
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Stable Output from -40°C to +85°CSingle & Stacked Devices up to 375WFiber Coupled Devices up to 188WHigh Reliability / High Efficiency

Specifications
Output Power (avg): 375 W
Wavelength: 0.915 um
Pulse Duration: 100-100ns
Tuning Range Around Center Wavelength: <= 200nm
Peak Wavelength: 895-915nm
...
Data Sheet
High Power Pulsed Laser Diodes
OSI Laser Diode Inc.
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High Power Pulsed Laser Diodes
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• High Eciency / High Reliability• Stable Output from -40°C to +85°C• Single and Stacked Devices up to 100Watts• 850nm and 905nm Wavelengths• Hermetic Package

Specifications
Output Power (avg): 100 W
Wavelength: 0.915 um
Pulse Duration: 100-100ns
Tuning Range Around Center Wavelength: <= 200nm
Spectral Width: 5 nm
...
Data Sheet
PULSED 850nm Instrument Laser Modules
OSI Laser Diode Inc.
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PULSED 850nm Instrument Laser Modules
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OSI Laser Diode, Inc.’s 850nm laser modules are designed for use in fiber optic instruments where high optical power and low powerconsumption are required. All packages contain LDI’s high reliability laser chips. The low profile style package is designed for use withnarrow high current pulses. Devices can be custom tailored to meet ...

Specifications
Output Power (avg): 1 W
Wavelength: 0.85 um
Pulse Duration: 50-50ns
Tuning Range Around Center Wavelength: <= 200nm
Threshold Current (typ): .1-.25 A
...
Data Sheet
1550nm Multi Junction Pulsed Laser Diode
OSI Laser Diode Inc.
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1550nm Multi Junction Pulsed Laser Diode
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“Eye Safe”• High Efficiency• 90μm and 350μm Emitter Widths• Stable Output from -40°C to +85°C• Single and Stacked Devices up to 60Watts• Hermetic Package• RoHS Compliant

Specifications
Output Power (avg): 75 W
Wavelength: 1.55 um
Pulse Duration: 150-150ns
Tuning Range Around Center Wavelength: <= 200nm
Beam Spread: 12 x 37 degrees
...
Data Sheet
HIGH POWER Quasi-CW Wavelength Stabilized QCL Platform
Pranalytica, Inc
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HIGH POWER Quasi-CW Wavelength Stabilized QCL Platform
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Pranalytica\'s Model 1101-XX-QCW-YYYY-EGC-UC-PF quantum cascade laser (QCL) system is a high average power, wavelength stabilized pulsed QCL platform of infrared radiation for OEM applications. Wavelength stabilization is achieved by incorporating a wavelength dispersive element inside the QCL butterfly package, which is hermetically ...

Specifications
Output Power (avg): 1.5 W
Wavelength: 4.6 um
Pulse Duration: 20-200ns
Tuning Range Around Center Wavelength: Not Applicable
Wavelength Range: 3.8-12um
...
Data Sheet
High Power Quasi-CW QCL Platform for OEM Applications
Pranalytica, Inc
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High Power Quasi-CW QCL Platform for OEM Applications
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Pranalytica\'s Model 1101-XX-QCW-YYYY-UC-MicroPF quantum cascade laser (QCL) system is a high average power, pulsed source platform of infrared radiation for OEM applications in a miniature butterfly package and ultra small electronics driver board. At a wavelength of 4.6 µm, the system produces in excess of 2 W of average power and ...

Specifications
Output Power (avg): 3 W
Wavelength: 4.6 um
Pulse Duration: 200-500ns
Tuning Range Around Center Wavelength: Not Applicable
Wavelength Range: 3.8-12um
...
Data Sheet