Page 5 - Buy Pulsed Semiconductor Lasers | Best wholesale prices from suppliers, manufacturers and factories

PowerMir 4.0µm High Power Pulsed Quantum Turnkey System (450mW | Standard Beam)

RPMC Lasers, Inc. Sponsored

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The PowerMir 4.0μm High-Power Pulsed Quantum Cascade Laser System is a versatile and user-friendly air-cooled benchtop system designed for lab development purposes. It offers plug-and-play functionality, allowing customers to easily set up and operate the system. The system is equipped with user-friendly Windows software that ...

Specifications
Output Power (avg):	0.450 W
Wavelength:	4.0 um
Pulse Duration:	---300ns
Tuning Range Around Center Wavelength:	Not Applicable
Physical Interface:	USB interface for PC connexion (USB cable supplied); TTL trig IN connector for TTL external signal; TTL trig OUT connector for synchronization
...

Data Sheet

PowerMir 4.0µm High Power Pulsed Quantum Turnkey System (2000mW | Standard Beam)

RPMC Lasers, Inc. Sponsored

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The PowerMir 4.0μm High-Power Pulsed Quantum Cascade Laser System is a versatile and user-friendly air-cooled benchtop system designed for lab development purposes. It offers plug-and-play functionality, allowing customers to easily set up and operate the system. The system is equipped with user-friendly Windows software that ...

Specifications
Output Power (avg):	2 W
Wavelength:	4.0 um
Pulse Duration:	-----ns
Tuning Range Around Center Wavelength:	Not Applicable
Functionalities:	Laser safety, Laser driver (ON/OFF), Laser temperature and TEC control, frequency modulation, duty cycle, external TTL
...

Data Sheet

DL-CLS259B-S1648 Ultra Narrow Linewidth Laser

DenseLight Semiconductors

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DenseLight DL-CLS Series is a cooled ultra narrow linewidth laser in BTF/DIL package with a single frequency emission. This laser is based on proprietary external cavity laser design utilizing a built-in fiber Bragg grating, offering very stable performance of lasing wavelength, narrow spectral linewidth and excellent SMSR. The ...

Specifications
Output Power (avg):	0.025 W
Wavelength:	1.648 um
Pulse Duration:	00-00ns
Tuning Range Around Center Wavelength:	Not Applicable
Packaging Option:	BTF

Data Sheet

DL-CLS509B-S1550 Ultra Narrow Linewidth Laser

DenseLight Semiconductors

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DenseLight DL-CLS Series is a cooled ultra narrow linewidth laser in BTF/DIL package with a single frequency emission. This laser is based on proprietary external cavity laser design utilizing a built-in fiber Bragg grating, offering very stable performance of lasing wavelength, narrow spectral linewidth and excellent SMSR. The ...

Specifications
Output Power (avg):	0.05 W
Wavelength:	1.550 um
Pulse Duration:	00-00ns
Tuning Range Around Center Wavelength:	Not Applicable
Packaging Option:	BTF

Data Sheet

DL-CLS409D-S1383 Ultra Narrow Linewidth Laser

DenseLight Semiconductors

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DenseLight DL-CLS Series is a cooled ultra narrow linewidth laser in BTF/DIL package with a single frequency emission. This laser is based on proprietary external cavity laser design utilizing a built-in fiber Bragg grating, offering very stable performance of lasing wavelength, narrow spectral linewidth and excellent SMSR. The ...

Specifications
Output Power (avg):	0.04 W
Wavelength:	1.383 um
Pulse Duration:	00-00ns
Tuning Range Around Center Wavelength:	Not Applicable
Packaging Option:	DIL

Data Sheet

DL-CLS409B-S1383 Ultra Narrow Linewidth Laser

DenseLight Semiconductors

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DenseLight DL-CLS Series is a cooled ultra narrow linewidth laser in BTF/DIL package with a single frequency emission. This laser is based on proprietary external cavity laser design utilizing a built-in fiber Bragg grating, offering very stable performance of lasing wavelength, narrow spectral linewidth and excellent SMSR. The ...

Specifications
Output Power (avg):	0.04 W
Wavelength:	1.383 um
Pulse Duration:	00-00ns
Tuning Range Around Center Wavelength:	Not Applicable
Packaging Option:	BTF

Data Sheet

DL-CLS309D-S1260 Ultra Narrow Linewidth Laser

DenseLight Semiconductors

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DenseLight DL-CLS Series is a cooled ultra narrow linewidth laser in BTF/DIL package with a single frequency emission. This laser is based on proprietary external cavity laser design utilizing a built-in fiber Bragg grating. The as-built lasing wavelength can be specified precisely to 1nm, and further precision (down to picometer ...

Specifications
Output Power (avg):	0.03 W
Wavelength:	1.260 um
Pulse Duration:	00-00ns
Tuning Range Around Center Wavelength:	Not Applicable
Packaging Option:	DIL

Data Sheet

DL-CLS309B-S1260 Ultra Narrow Linewidth Laser

DenseLight Semiconductors

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DenseLight DL-CLS Series is a cooled ultra narrow linewidth laser in BTF/DIL package with a single frequency emission. This laser is based on proprietary external cavity laser design utilizing a built-in fiber Bragg grating. The as-built lasing wavelength can be specified precisely to 1nm, and further precision (down to picometer ...

Specifications
Output Power (avg):	0.03 W
Wavelength:	1.260 um
Pulse Duration:	00-00ns
Tuning Range Around Center Wavelength:	Not Applicable
Packaging Option:	BTF

Data Sheet

CAVILUX Smart UHS System

Cavitar Ltd.

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For ultra-high-speed imaging

Specifications
Output Power (avg):	200 - 500 W
Wavelength:	0.640 or 0.810 um
Pulse Duration:	10-10000ns
Tuning Range Around Center Wavelength:	Not Applicable

Data Sheet

CAVILUX Smart System

Cavitar Ltd.

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For high-speed imaging and monitoring

Specifications
Output Power (avg):	200 - 500 W W
Wavelength:	0.640 or 0.810 um
Pulse Duration:	10-10000ns
Tuning Range Around Center Wavelength:	Not Applicable

Data Sheet

CAVILUX HF UHS System

Cavitar Ltd.

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For ultra-high-speed imaging

Specifications
Output Power (avg):	280 or 500 W W
Wavelength:	0.640 or 0.810 um
Pulse Duration:	10-10000ns
Tuning Range Around Center Wavelength:	Not Applicable

Data Sheet

CAVILUX HF System

Cavitar Ltd.

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Boost for high-speed imaging

Specifications
Output Power (avg):	280 or 500 W
Wavelength:	0.640 or 0.810 um
Pulse Duration:	10-10000ns
Tuning Range Around Center Wavelength:	Not Applicable

Data Sheet

CAT/TEC-055-473-20 ns Pulsed Diode Laser

Sacher Lasertechnik GmbH

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Sacher Lasertechnik is leading manufacturer of tunable external cavity diode lasers (ECDLs) with more than 20 years of experience. The product range includes antireflection coated diode lasers, ECDLs in Littrow and in Littman/Metcalf configuration as well as driver electronics for the LD and sophisticated measuring electronics. ...

Specifications
Output Power (avg):	0.020 W
Wavelength:	0.473 um
Pulse Duration:	5-15ns
Tuning Range Around Center Wavelength:	Not Applicable

Data Sheet

CAT/TEC-055-445-50 ns Pulsed Diode Laser

Sacher Lasertechnik GmbH

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Sacher Lasertechnik is leading manufacturer of tunable external cavity diode lasers (ECDLs) with more than 20 years of experience. The product range includes antireflection coated diode lasers, ECDLs in Littrow and in Littman/Metcalf configuration as well as driver electronics for the LD and sophisticated measuring electronics. ...

Specifications
Output Power (avg):	0.050 W
Wavelength:	0.445 um
Pulse Duration:	5-15ns
Tuning Range Around Center Wavelength:	Not Applicable

Data Sheet

CAT/TEC-055-405-120 ns Pulsed Diode Laser

Sacher Lasertechnik GmbH

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Sacher Lasertechnik is leading manufacturer of tunable external cavity diode lasers (ECDLs) with more than 20 years of experience. The product range includes antireflection coated diode lasers, ECDLs in Littrow and in Littman/Metcalf configuration as well as driver electronics for the LD and sophisticated measuring electronics. ...

Specifications
Output Power (avg):	0.120 W
Wavelength:	0.405 um
Pulse Duration:	5-15ns
Tuning Range Around Center Wavelength:	Not Applicable

Data Sheet

CAT/TEC-055-405-55 ns Pulsed Diode Laser

Sacher Lasertechnik GmbH

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Sacher Lasertechnik is leading manufacturer of tunable external cavity diode lasers (ECDLs) with more than 20 years of experience. The product range includes antireflection coated diode lasers, ECDLs in Littrow and in Littman/Metcalf configuration as well as driver electronics for the LD and sophisticated measuring electronics. ...

Specifications
Output Power (avg):	0.055 W
Wavelength:	0.405 um
Pulse Duration:	5-15ns
Tuning Range Around Center Wavelength:	Not Applicable

Data Sheet

CAT/TEC-055-375-20 ns Pulsed Diode Laser

Sacher Lasertechnik GmbH

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Sacher Lasertechnik is leading manufacturer of tunable external cavity diode lasers (ECDLs) with more than 20 years of experience. The product range includes antireflection coated diode lasers, ECDLs in Littrow and in Littman/Metcalf configuration as well as driver electronics for the LD and sophisticated measuring electronics. ...

Specifications
Output Power (avg):	0.02 W
Wavelength:	0.375 um
Pulse Duration:	5-15ns
Tuning Range Around Center Wavelength:	Not Applicable

Data Sheet

MC7803M-7A15 Low Power Diode Lasers

Monocrom

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Modulatable & focusable laser diode module at 780nm <1mW

Specifications
Output Power (avg):	0.00093 W
Wavelength:	0.78 um
Pulse Duration:	1700-1700ns
Tuning Range Around Center Wavelength:	Not Applicable

Data Sheet

DPGEW1S03H 905 nm Pulsed Semiconductor Laser

Pacer USA LLC

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Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip. This multi-layer design multiplies the output power by the number of epi-layers. For example, the QPGEW quad ...

Specifications
Output Power (avg):	-- W
Wavelength:	0.905 um
Pulse Duration:	00-00ns
Tuning Range Around Center Wavelength:	Not Applicable
Peak Power:	13 W

PGEW1S03H 905 nm Pulsed Semiconductor Laser

Pacer USA LLC

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Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip. This multi-layer design multiplies the output power by the number of epi-layers. For example, the QPGEW quad ...

Specifications
Output Power (avg):	-- W
Wavelength:	0.905 um
Pulse Duration:	20-20ns
Tuning Range Around Center Wavelength:	Not Applicable
Peak Power:	6.5 W

QPGEW1S09H 905 nm Pulsed Semiconductor Laser

Pacer USA LLC

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Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip. This multi-layer design multiplies the output power by the number of epi-layers. For example, the QPGEW quad ...

Specifications
Output Power (avg):	-- W
Wavelength:	0.905 um
Pulse Duration:	20-20ns
Tuning Range Around Center Wavelength:	Not Applicable
Peak Power:	85 W

TPGEW1S09H 905 nm Pulsed Semiconductor Laser

Pacer USA LLC

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Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip. This multi-layer design multiplies the output power by the number of epi-layers. For example, the QPGEW quad ...

Specifications
Output Power (avg):	-- W
Wavelength:	0.905 um
Pulse Duration:	20-20ns
Tuning Range Around Center Wavelength:	Not Applicable
Peak Power:	70 W

DPGEW1S09H 905 nm Pulsed Semiconductor Laser

Pacer USA LLC

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Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip. This multi-layer design multiplies the output power by the number of epi-layers. For example, the QPGEW quad ...

Specifications
Output Power (avg):	-- W
Wavelength:	0.905 um
Pulse Duration:	20-20ns
Tuning Range Around Center Wavelength:	Not Applicable
Peak Power:	45 W

PGEW1S09H 905 nm Pulsed Semiconductor Laser

Pacer USA LLC

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Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip. This multi-layer design multiplies the output power by the number of epi-layers. For example, the QPGEW quad ...

Specifications
Output Power (avg):	-- W
Wavelength:	0.905 um
Pulse Duration:	20-20ns
Tuning Range Around Center Wavelength:	Not Applicable
Peak Power:	23 W

QPGAx3S09H Pulsed Laser Diodes

Pacer USA LLC

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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg):	-- W
Wavelength:	0.905 um
Pulse Duration:	1-1ns
Tuning Range Around Center Wavelength:	Not Applicable
Peak Power:	255 W

QPGAx3S03H Pulsed Laser Diodes

Pacer USA LLC

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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg):	-- W
Wavelength:	0.905 um
Pulse Duration:	1-1ns
Tuning Range Around Center Wavelength:	Not Applicable
Peak Power:	85 W

QPGAx2S09H Pulsed Laser Diodes

Pacer USA LLC

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Pulsed semiconductor lasers in the near IR are commonly used for long-distance time-of-flight or phase-shift range-finder or LIDAR systems. Excelitas offers a broad range of ideally-suited pulsed 905 nm laser designs including multi-cavity monolithic structures with up to 4 active areas per chip resulting in up to 100 W of peak ...

Specifications
Output Power (avg):	-- W
Wavelength:	0.905 um
Pulse Duration:	1-1ns
Tuning Range Around Center Wavelength:	Not Applicable
Peak Power:	175 W

Semiconductor Lasers

Page 5 - Pulsed Semiconductor Lasers

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