HL83013MG Laser Diode
Description
HL83013MG GaAlAs Laser Diode.
HL83013MG Laser Diode
Specifications |
|
|---|---|
| Center Wavelength: | 0.83 um |
| Output Power: | 50 mW |
Features
Operation temperature: -10~+60°C
Optical output power: 50mW(CW)
Infrared lasing: 830nm Typ.
Low operating voltage: 2.4V Max.
Package: 5.6mm
Single transverse mode
TE mode oscillation
Applications
Sensor application
Night vision
Machine vision
Light source of optical equipments
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Frequently Asked Questions
No, the HL83013MG laser diode is not designed to be radiation resistant.
The lasing wavelength for the HL83013MG laser diode is 830nm Typ.
The maximum optical output power for the HL83013MG laser diode is 50mW (CW).
The operating temperature range for the HL83013MG laser diode is -10~+60°C.
The package size for the HL83013MG laser diode is 5.6mm.