FPD-XXXS-795-YY-DBR Laser Diode 795nm DBR
FPD-XXXS-795-YY-DBR Series of high-power edge-emitting lasers are based on advanced single-frequency laser technology. It provides a diffraction limited, single lateral and longitudinal mode beam. Facets are passivated for high-power reliability. Devices used for atomic spectroscopy for rubidium based D1 applications.
- Center Wavelength: 0.795 um
- Output Power: -- mW
DBR Single Frequency Laser Chip
AlGaAs QW Active Layer
Epi designed for high reliability
Various packaging styles
Pulsed operation for spectral stability at
short pulse lengths
High power for CW applications
High slope efficiency
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