microMIRA High Throughput Laser Lift-Off System
Description
microMIRA High Throughput Laser Lift-Off System
Specifications |
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|---|---|
| Laser Source: | Excimer |
| Wavelength: | 248 nm |
| Laser Output Power: | -- W |
| Laser Pulse Energy: | -- mJ |
| Laser Pulse Duration: | -- ns |
| Laser Repetition Rate: | -- Hz |
| X-Axis Range: | 750 mm |
| Y-Axis Range: | 750 mm |
| Laser Line Length: | 205 mm |
| Laser Line Width: | 33 um |
Features
- Force-free and extremely selective laser processing
- No damage due to thermo-mechanical effects
- Low production costs
- Elimination of costly and polluting wet chemical processes
- Integration of adjacent manufacturing steps for greater fab productivity
Applications
- Process modules for spin coating
- Debonding module
- Quality inspection
- Automatic handling for panels and wafers
- Cleaning module
- Other auxiliary modules available on request
For pricing, technical or any other questions please contact the supplier
- No registration required
- No markups, no fees
- Direct contact with supplier
Contact Supplier
How to order?
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Ships from:
Germany
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Sold by:
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On FindLight:
External Vendor
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Frequently Asked Questions
The available options for the microMIRA High Throughput Laser Lift-Off System include auxiliary processes, debonding module, quality inspection, automatic handling system, cleaning module, up to 4 SMIF load ports, and other auxiliary modules.
The microMIRA High Throughput Laser Lift-Off System features force-free and extremely selective laser processing, no damage due to thermo-mechanical effects, low production costs, and elimination of costly and polluting wet chemical processes. It also allows for integration of adjacent manufacturing steps for greater fab productivity.
The highlights of the microMIRA High Throughput Laser Lift-Off System include force-free and extremely fast line beam laser processing, no damage due to thermo-mechanical effects, low production costs, elimination of costly and polluting wet chemical processes, and integration of adjacent manufacturing steps for higher fab productivity.
The microMIRA High Throughput Laser Lift-Off System is suitable for substrate size up to 8” (200 mm) and uses an excimer laser source LEAP 1.25 or UV ps laser 248 nm wavelength. It has a line beam dimensions at sample surface of 205 mm x 0.33 mm for 8” wafer and can process one wafer/minute for 8” GaN on Sapphire including process and handling time (depending on system setup and customers workpiece). It also has high precision, direct driven Y, Z axis (with optional theta-stage) and manual, semi-automated or fully-automated work piece alignment with X, Y system and optical measurement system.
The microMIRA High Throughput Laser Lift-Off System is used for highly uniform, force-free lift-off of flexible layers on wafers and large surface areas (up to GEN 6) and at high processing speeds. It can be used for a variety of applications, such as device lift-off from glass and sapphire substrates in semiconductor manufacturing as well as OLED and microLED display manufacturing.